〇Soshi Iimura¹, Keiga Fukui¹, Tomofumi Tada¹, Satoru Fujitsu¹, Masato Sasase¹, Hiromu Tamatsukuri², Takashi Honda², Kazutaka Ikeda², Toshiya Otomo², Hideo Hosono¹ (1.TiTech, 2.KEK)

4:50 PM - 5:25 PM

[20p-C212-6] Effect of controlling anion configuration for H^– conductive oxyhydrides on the conduction properties

〇Genki Kobayashi^1,2 (1.IMS, 2.SOKENDAI)

5:25 PM - 6:00 PM

[20p-C212-7] Design and control of structures and functions using characteristics of hydride anions

〇Hiroshi Kageyama¹ (1.Kyoto Univ.)

Sessions

Symposium (technical) » Hydrogen in oxides and its role

[20a-C212-1~4] Hydrogen in oxides and its role

[20a-C212-1] Hydrogen in oxides, its contribution to charge compensation and stability

[20a-C212-2] Hydrogen in amorphous oxide semiconductors: Effects on thin film growth and device characteristics

[20a-C212-3] Influence of Hydrogen on Reliability in Si Devices

[20a-C212-4] Resistive switching induced by diffusion of hydrogen ions

[20p-C212-1~7] Hydrogen in oxides and its role

[20p-C212-1] Lithium Super-Ionic Conduction and Energy Devise Application of Complex Hydrides

[20p-C212-2] Quantification of hydrogen and electronic-structure analysis of titanium oxides surfaces

[20p-C212-3] Research Trends in Oxide Semiconductor based Gas Sensors: Toward Highly Sensitive Hydrogen Gas Detection

[20p-C212-4] Development of highly hydrogen-sensitive thermal desorption spectroscopy system

[20p-C212-5] Fast hydride ion conduction in LaH_3–2xO_x at intermediate-temperature

[20p-C212-6] Effect of controlling anion configuration for H^– conductive oxyhydrides on the conduction properties

[20p-C212-7] Design and control of structures and functions using characteristics of hydride anions

Authentication