[20a-C212-1~4] Hydrogen in oxides and its role

[20a-C212-3] Influence of Hydrogen on Reliability in Si Devices

〇Yuichiro Mitani¹, Harumi Seki¹, Yasushi Nakasaki¹ (1.Toshiba Memory Corp.)

Keywords:oxide, reliability, hydrogen

Hydrogen improves the Si device performance due to the inactivations of defects in oxide films and interfaces. On the other hand, hydrogen deteriorates the device reliability during operation. In order to understand the role of hydrogen on the device reliability, tons of experiments and calculations were reported previously. In our talk, the hydrogen-related degradation of the oxide reliabilities will be discussed including the microscopic mechanisms.