[20a-C310-1~12] 6.4 Thin films and New materials

[20a-C310-6] Target state control and preparation of tantalum oxide thin films by water vapor sputtering

〇Yusuke Ito¹, Yoshio Abe¹, Midori Kawamura¹, Kyung Ho Kim¹, Takayuki Kiba¹ (1.Kitami Inst Tech.)

Keywords:high-rate deposition, reactive sputtering, plasma emission spectra

In order to clarify the reason for the high-speed deposition of tantalum oxide thin film using water vapor as a reaction gas, the target state was examined. From the plasma emission spectra, it was revealed that the tantalum oxide thin film was formed under a metallic target mode. We considered that the liquid nitrogen tank in the chamber adsorbed unreacted excess water vapor and the metal target maintained a metallic mode.