[20a-E201-1~10] 17.3 Layered materials

[20a-E201-10] Step-Like Transfer Characteristics of FETs based on Multilayer MoS₂

〇(M2)Takuya Ohoka¹, Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.JST-PRESTO)

Keywords:MoS2, field effect transistors, step-like transfer characteristics

Field effect transistors using an archetypal layered semiconductor, MoS₂, as the channel material often show unusual FET characteristics. In this presentation, we will report on step-like transfer characteristics that are frequently observed with multilayer MoS₂ channels. The step-like characteristics are more frequently found as the channel thickness becomes thicker. We will discuss the origin of the step-like feature in terms of an edge conduction channel and inhomogeneity in flake thickness.