2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2019 » 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

[20a-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

2019年9月20日(金) 10:00 〜 11:45 E215 (E215)

岩本 敏(東大)

10:30 〜 10:45

[20a-E215-2] Investigation of bonding strength between (InP, Si)/SiO2 and Si by Surface Activated Bonding based on Fast Atom Beam assisted by Si nano-film

〇(M2)Weicheng Fang1、Yuning Wang1、Tomohiro Amemiya1,2、Nobuhiko Nishiyama1,2 (1.Titech、2.FIRST)

キーワード:surface activated bonding

Semiconductor membrane lasers are promising light source for on-chip interconnection on LSI. However, relatively large thermal resistance due to low thermal conductivity of bottom insulator is one of the problems to be solved and direct bonding with minimum SiO2 thickness should be realized. In recent years, surface activated bonding based on fast atom beam was proposed, which can realize wafer bonding at room temperature. However, oxides like SiO2 are not suitable material to this method in a general condition. Therefore, to solve this problem, the Si nano-film layer was used. In this report, physical bonding strength after Si or InP to SiO2 wafer bonding process is investigated.