2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2019 » 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

[20a-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

2019年9月20日(金) 10:00 〜 11:45 E215 (E215)

岩本 敏(東大)

11:00 〜 11:15

[20a-E215-4] Tunable optical filter enabled by phase change material embedded in SOI microring resonator

〇(D)Nadir Ali1、Rajesh Kumar1 (1.Indian Inst. of Tech. Roorkee)

キーワード:silicon photonics, microring tunable optical filter, phase change material

Silicon-on-insulator (SOI) technology has emerged as the potential candidate for the integrated photonics mainly because of the availability of mature manufacturing technology and low loss light guidance for a wide wavelength range of 1-7 micron. Silicon has limitations for active devices due to moderate refractive index tuning. Phase change material Ge2Sb2Te5 (GST) has been recently utilized as optically active material to design and experimentally realize active silicon photonic devices. The low-loss amorphous phase of GST has higher thermo-optic coefficient than the silicon. Here, we propose a tunable optical filter based on the thermal tuning of SOI microring resonator embedded with amorphous phase GST. The output wavelength of the filter can be tuned by raising the GST temperature through applied voltages. This filter can be used as fundamental building blocks in more complex photonic integrated circuits.