11:30 〜 11:45
▲ [20a-E215-6] Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction
キーワード：proximity effect correction, silicon photonics
Silicon photonics has been an active research field due to the potential of optoelectronics integration. Hence, it can be a promising candidate to exceed the speed bottleneck for data interconnects. Electron beam lithography is a convenient patterning process for R&D applications. Proximity effect correction of a thick resist process (700 nm) for soft-mask ICP-RIE of Si waveguides is studied to solve the proximity issues and allow for narrower trenches with less exposure time.
Beam shape is deduced experimentally by the line-spread function method. Measurement is performed for the bottom width as the critical dimension, allowing for more sharp resist sidewalls that improves the pattern shape. In this calibration, development is performed after cleavage to reduce loading effects. Silicon waveguide was sharp walls was fabricated with a relatively thick resist mask and without a SiO2 hard mask. Hence, possible under-etching of the buried-oxide can be avoided during hard mask removal.
Beam shape is deduced experimentally by the line-spread function method. Measurement is performed for the bottom width as the critical dimension, allowing for more sharp resist sidewalls that improves the pattern shape. In this calibration, development is performed after cleavage to reduce loading effects. Silicon waveguide was sharp walls was fabricated with a relatively thick resist mask and without a SiO2 hard mask. Hence, possible under-etching of the buried-oxide can be avoided during hard mask removal.