[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

[20a-E301-4] DLTS studies of interface states for SiO₂/n-GaN deposited by different methods

〇(M2)Kazuya Tamura¹, Yutaka Tokuda¹, Takashi Okawa², Hidemoto Tomita² (1.Aichi Inst. of Technol., 2.Toyota Motor Corporation)

Keywords:GaN, DLTS

We have studied interface states of the SiO₂/n-GaN prepared by using different deposition methods of SiO₂. Interface state distributions were obtained by DLTS measurements in the temperature range from 80 to 400 K. Interface state densities for the p-CVD SiO₂/n-GaN were from 6.3 to 3.1×10¹¹ eV^-1cm^-2 in the energy range from E_c-0.14 to 0.74 eV, while those for the ALD SiO₂/GaN was 2.2 to 0.5×10¹¹ eV^-1cm^-2. It is found that interface state densities for p-CVD SiO₂/n-GaN were larger than those for the ALD one, which might be ascribed to the damage induced by p-CVD.