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[20a-E301-4] DLTS studies of interface states for SiO2/n-GaN deposited by different methods
Keywords:GaN, DLTS
We have studied interface states of the SiO2/n-GaN prepared by using different deposition methods of SiO2. Interface state distributions were obtained by DLTS measurements in the temperature range from 80 to 400 K. Interface state densities for the p-CVD SiO2/n-GaN were from 6.3 to 3.1×1011 eV-1cm-2 in the energy range from Ec-0.14 to 0.74 eV, while those for the ALD SiO2/GaN was 2.2 to 0.5×1011 eV-1cm-2. It is found that interface state densities for p-CVD SiO2/n-GaN were larger than those for the ALD one, which might be ascribed to the damage induced by p-CVD.