[20a-E304-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-E304-2] Influence of Cu concentration and heat treatment on radiophotoluminescence phenomenon in Cu-doped silica glass prepared from porous silica glass

〇Yuya Takada¹, Ryo Hashikawa¹, Atsushi Kinomura², Takeshi Saito², Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. of Tech., 2.KURNS)

Keywords:Radiophotoluminescence, Silica Glass

When the glass is irradiated with ionizing radiation, the valence of metal ions in the glass changes and a new luminescent center is generated. This phenomenon is called radiophotoluminescence (RPL). As the intensity is proportional to absorbed dose, materials exhibiting RPL are expected to be applied for dosimeters. In our laboratory, RPL phenomenon discovered in Cu-doped aluminoborosilicate glass and Cu-doped silica glass. In this presentation, we report the influence of Cu concentration and heat treatment on the radiophotoluminescence phenomenon in Cu-doped silica glass prepared from porous silica glass.