[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-1] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

〇(B)Naoya Niikura¹, Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda univ., 2.Zaiken)

Keywords:Diamond, MOSFET, Vertical Type device

We have fabricated vertical type 2DHG Diamond MOSFETs with hexagonal trenches using (111) substrate to reduce the on-resistance and increase the drain current of the devices. As a result, a high drain current density of -680 mA / mm was confirmed, which is about three times that of the conventional vertical device. In addition, a device with a trench of 12 μm on a side gives a minimum on-resistance of 9.2 mΩcm 2 in a device using (111) diamond, and the application of a high-power and low-loss vertical diamond FET is expected.