[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-2] Evaluation of RF Performance for ALD-Al2O3 2DHG Diamond MOSFETs by miniaturization of the Gate Length

〇(B)Masakazu Arai¹, Ken Kudara¹, Shoichiro Imanishi¹, Kiyotaka Horikawa¹, Atsushi Hirakawa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ, 2.Zaiken)

Keywords:diamond, high frequency, MOSFET

Miniaturing gate length enables transistor to be improved current density and high-frequency performance. To date, high-frequency performances of diamond FETs have been enhanced through miniaturing gate length using self-aligned-gate process. We have reported RF output power density of 3.8 W/mm for a 0.5µm-gate-length ALD-Al2O3 diamond MOSFETs with Al2O3 deposited to act as gate insulator and passivation film using high-temperature ALD method. In this work, to improve DC and RF performances, we fabricated ALD-AL2O3 2DHG diamond MOSFETs with gate length of 0.2 µm and evaluated DC and RF performances.