[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-3] RF Power Performance when biased at V_DS of −70 V
for 2DHG Diamond MOSFETs with 200-nm Insulator Al₂O₃;

〇(B)Yukiko Suzuki¹, Ken Kudara¹, Shoichiro Imanishi¹, Kiyotaka Horikawa¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken.)

Keywords:diamond, MOSFET, radio frequency

Radio-frequency (RF) output power density is enhanced by widening voltage swing width under high voltage operation. We have reported that a 2-dimensional hole gas (2DHG) diamond MOSFET with a high breakdown voltage structure demonstrated a RF output power density P_out = 3.8 W/mm at V_DS = −50 V, which is the highest for p-FETs. In this work, we fabricated diamond MOSFETs with extended gate-drain length and thickened Al₂O₃ insulator to improve breakdown voltage characteristics, and evaluated large-signal performances at V_DS = −70 V, which is the highest of diamond FETs.