[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-4] Electrical Properties of Inversion Channel Diamond MOSFET with N-doped body

〇Tsubasa Matsumoto¹, Ukyo Sakurai¹, Tomoya Yamakawa¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Satoshi Yamasaki^1,2, Takao Inokuma¹, Norio Tokuda^1,2 (1.Kanazawa Univ., 2.AIST)

Keywords:diamond, MOSFET, mobility

We reported inversion channel diamond MOSFET using P-doped body with high on/off ratio of over 10¹⁰ and normally-off characteristics. However, a high field effect mobility μ_FE reflecting a high bulk carrier mobility has not been obtained. To improve μ_FE, we fabricated and evaluated the diamond MOSFET using N-doped body that has been researched on doping concentration and surface structure control. Then, we compared with conventional diamond MOSFET using P-doped body.