5:00 PM - 5:15 PM
△ [20p-B31-12] Reduction of the Threading Dislocation Density of α-Ga2O3 by Multi-layered ELO
Keywords:Ga2O3, HVPE, ELO
Alpha-gallium oxide (α-Ga2O3) is promising as a material for the power device semiconductors. Freestanding α-Ga2O3 substrates cannot be produced through the melt-growth technique, since α-Ga2O3 is thermodynamically meta-stable. Thus the α-Ga2O3 films are grown by heteroepitaxy. There are a large number of dislocations in the α-Ga2O3 films because of the lattice mismatch. Accordingly dislocations need to be reduced in order to improve the performance of α-Ga2O3 devices. In this study, we utilized multi-layered ELO technique to reduce dislocation density of α-Ga2O3 films grown by HVPE.