The 80th JSAP Autumn Meeting 2019

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Symposium (Oral)

Symposium (technical) » Applications of new ferroelecric materials for the future electric devices

[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)

Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)

3:15 PM - 3:30 PM

[20p-C309-4] Time-resolved Simulation of Negative Capacitance Caused by Change in Interface Potential at the Ferroelectric/Semiconductor Hetero-Junction

〇Kenshi Takada1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Pref. Univ.)

Keywords:Negative capacitance, ferroelectric