The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

3 Optics and Photonics » 3.9 Terahertz technologies

[20p-E206-1~11] 3.9 Terahertz technologies

Fri. Sep 20, 2019 1:45 PM - 4:45 PM E206 (E206)

Eiichi Matsubara(Natl. Inst. of Tech., Asahikawa Col.), Safumi Suzuki(Tokyo Tech)

2:15 PM - 2:30 PM

[20p-E206-3] The injection locking mechanism of resonant-tunneling-diode terahertz oscillators

Tomoki Hiraoka1, Takashi Arikawa1, Hiroshi Ito2, Koichiro Tanaka1 (1.Dept. of Physics, Kyoto Univ., 2.Center for Natural Sciences, Kitasato Univ.)

Keywords:terahertz, resonant tunneling diode, oscillator

Resonant-tunneling-diode (RTD) oscillators are compact and low-priced semiconductor devices which can oscillate at terahertz frequency. A serious problem of RTD oscillators is its large phase noise. Injection locking is a widely used method for stabilizing oscillators. In the RTD oscillators, the injection locking properties are merely studied. In this study, we investigate the properties of RTD oscillator under the injection of a narrow-band continuous terahertz wave. When the injection frequency is close to the free-running frequency of RTD oscillator, injection locking was observed. We measured the dependence of the locking frequency range to the injection power. The result is consistent with Adler's theory, which is a standard theory for injection locking. In the presentation, we discuss the stability of the oscillation to the injection power and frequency. We also discuss the mechanism of injection locking in RTD oscillators.