[20p-E216-8~20] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [20p-E216-9] Control of crystal orientation of non-collinear antiferromagnetic Mn₃Sn thin films prepared by sputtering

〇(M1)Juyoung Yoon¹、Yutaro Takeuchi¹、Ryuichi Itoh¹、Shun Kanai¹、Shunsuke Fukami¹、Hideo Ohno¹ (1.Tohoku Univ.)

キーワード：Spintronics, non-collinear antiferromagnet

Noncollinear antiferromagnetic materials with Kagome lattice have recently attracted much attention as they exhibit large anomalous Hall effect (AHE) originating in the Berry curvature mediated by the noncollinear spin structures. To construct functional devices, controllable crystal orientation film growth technique is required.
Here we prepare Mn₃Sn thin films while changing several parameters such as substrate, underlayer, and annealing temperature, and investigate the correlation between their crystal structure and magnetic/transport properties.
We succeeded in preparing thin films with various orientations.