[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [20p-E303-7] Study of defects in p-type diamond semiconductor by photocurrent and photoluminescence spectroscopy

〇(D)Junjie Guo^1,2, Aboulaye Traore¹, Muhammad Hafiz Bin Abu Bakar^1,2, Toshiharu Makino^1,2, Satoshi Yamasaki^1,2, Masahiko Ogura², Takeaki Sakurai¹ (1.univ. Tsukuba, 2.inst. AIST)

Keywords:diamond, defects, photocurret

Defects are essential for applications in semiconductor devices, such as Schottky barrier diode, transistor. In order to control the defects, we must first understand them. However, methods to characterize the defects in diamond are limited by its wide band gap 5.5 eV. In this work, photocurrent and photoluminescence (PL) spectroscopy were used to study defects in p-type diamond. Photocurrent is a sensitive method for investigation of defects in diamond compared to other ones such as admittance spectroscopy, because optical emission is easier to cover wide band gap than thermal emission. Here, the first attempt to study the defects in vertical diamond Schottky barrier diode by photocurrent spectroscopy is discussed. It based on the detection of charge carriers promoted via optical emission by two-step process, and three thresholds are observed. The photoluminescence with different applied bias to identify the charge state of nitrogen related defects observed in the photocurrent spectrum.