The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-E310-1~21] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Narihito Okada(Yamaguchi Univ.), Yoshio Honda(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

1:30 PM - 1:45 PM

[20p-E310-2] Influence of NH3 partial pressure on homoepitaxial growth of AlN by HVPE

〇Nao Takekawa1, Daichi Saito1, Yudai Shimizu1, Ken Goto1, Toru Nagashima2, Reo Yamamoto2, Yoshinao Kumagai1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.TUAT IGIR)

Keywords:Aluminum nitride, HVPE