Nao Takekawa

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-E310-1~21] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM

[20p-E310-2] Influence of NH₃ partial pressure on homoepitaxial growth of AlN by HVPE

〇Nao Takekawa¹, Daichi Saito¹, Yudai Shimizu¹, Ken Goto¹, Toru Nagashima², Reo Yamamoto², Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.TUAT IGIR)