[20p-E310-1~21] 15.4 III-V-group nitride crystals

[20p-E310-8] Boron precursors of CVD grown BN thin films

〇Hisashi Yamada¹, Sho Inotsume^1,2, Toshikazu Yamada¹, Mituaki Shimizu^1,2 (1.AIST-NU GaN-OIL, 2.Nagoya Univ.)

Keywords:BN, B2H6, (CH3)3B

Hexagonal boron nitride (h-BN) is a wide band gap semiconductor (~6 eV) having a layered structure, and is expected to be a deep ultraviolet light emitting device material, a gate insulating film of a graphene semiconductor, a lift-off layer of a GaN based semiconductor. Lastly, we reported on the CVD growth of h-BN thin films using diborane (B₂H₆) which does not contain C and Cl as raw materials. Here we report the results of characterization of h-BN thin films deposited under the same conditions using B2H6 and trimethylboron (TMB, (CH₃)₃B).