[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-14] Estimation of high injection lifetime and diffusion length in a 4H-SiC thick epilayer

〇(M2)Keisuke Nagaya¹, Takashi Hirayama¹, Akira Miyasaka², Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1.NITech., 2.Showa Denko K.K., 3.AIST.)

Keywords:4H-SiC, Career lifetime

In SiC devices, lifetime is an important parameter which affects device performance. In this study, we try lifetime measurement using the free carrier absorption (FCA) method which can be evaluated with high spatial resolution. This time, we attempted to estimate high injection lifetime and diffusion length in a 4H-SiC thick epilayer.