[20p-E312-1~14] 6.2 Carbon-based thin films

[20p-E312-2] Angle-resolved Hard X-ray Photoelectron Spectroscopy Study of ICP etching Damage Layer
on Diamond Surface

〇Reito Wada¹, Kouhei Takizawa¹, Yukako Kato², Masahiko Ogura², Toshiharu Makino², Satoshi Yamasaki², Hiroshi Nohira¹ (1.Tokyo City Univ., 2.AIST)

Keywords:Diamond, ICP etching, Hard X-ray Photoelectron Spectroscopy

ICP etching is essential for diamond device fabrication, and it has been shown that ICP etching produces a defect layer in diamond. However, since the detection depth is insufficient in photoelectron spectroscopy by soft x-ray, details such as the chemical bonding state of the defect layer are not known. The chemical bonding state was investigated by using both hard X-ray photoelectron spectroscopy and soft X-ray photoelectron spectroscopy. As a result, it became clear that C—H bonds exist at a depth of 3 nm or more from the surface.