The 80th JSAP Autumn Meeting 2019

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Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 9:00 AM - 11:15 AM B31 (B31)

Tomoki Abe(Tottori Univ.)

10:15 AM - 10:30 AM

[21a-B31-5] Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

〇Makoto Minohara1, Naoto Kikuchi1, Yoshiyuki Yoshida1, Hiroshi Kumigashira2,3, Yoshihiro Aiura1 (1.AIST, 2.KEK, 3.Tohoku Univ.)

Keywords:Oxide semiconductor, Pulsed laser deposition