[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-7] High Hall mobility of W-doped In₂O₃ ultra-thin films grown by reactive plasma deposition

〇Yutaka Furubayashi¹, Makoto Maehara², Hisashi Kitami^1,2, Toshiyuki Sakemi², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.SHI, Ltd.)

Keywords:Tungsten-doped indium oxide, High mobility, Ultra thin films

Because tungsten-doped In₂O₃ (IWO) films have a higher Hall mobility (μ_H) than that of tin-doped In₂O₃ (ITO), they are investigated as an application for solar cells. However, from the viewpoint of the required sheet registance for these applications, there are no report on these films with a lower thickness less than 50 nm. In this study, we fabricated successfully ultra-thin (~ 10 nm) IWO films with a high μ_H.