The 80th JSAP Autumn Meeting 2019

Presentation information

Print

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 9:00 AM - 11:15 AM B31 (B31)

Tomoki Abe(Tottori Univ.)

11:00 AM - 11:15 AM

[21a-B31-8] Influence of Indium-precursors on Halide Vapor Phase Epitaxy of In2O3

〇Kenta Nagai1, Nami Tanaka1, Yuya Saimoto1, Rie Togashi2, Nao Takekawa1, Ken Goto1, Yoshinao Kumagai1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Sophia Univ., 3.TUAT IGIR)

Keywords:indium oxide, halide vapor phase epitaxy, thermodynamic analysis