The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[21a-C310-1~12] 6.4 Thin films and New materials

Sat. Sep 21, 2019 9:00 AM - 12:15 PM C310 (C310)

Hiroaki Nishikawa(Kindai Univ.)

10:45 AM - 11:00 AM

[21a-C310-7] Pre-sputtering Condition for Crystallized Yttria Stabilized Zirconia (YSZ) Film Deposition on Cellulose Nanopaper (CNP) by Reactive Sputtering

〇(M1C)Jyotish Patidar1, Susumu Horita1 (1.JAIST)

Keywords:Reactive Sputtering, YSZ, low temperature

Previously, it was found that yttria stabilized zirconia (YSZ) film is quite effective to stimulate crystallization of amorphous Silicon (a-Si) at low temperature. For using the YSZ effect to fabricate electron devices, e.g., TFT, on a flexible substrate and environment friendly material of cellulose nanopaper (CNP), a crystallized YSZ must be deposited without plasma and thermal damage to CNP. Earlier, we have reported that a crystallized YSZ film can be deposited on CNP without any damage using DC magnetron sputtering with Ar and O2. In this meeting, we show that pre-sputtering condition or treatment of target surface before deposition is one of the important factors for deposition of a highly crystallized YSZ film. Films deposited with pre-sputtering at high O2 flow rates, showed better film qualities due to stabilization of discharge conditions.