[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-12] Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

〇Hiromasa Okita¹, Takuya Hoshii¹, Taihei Matsuhashi¹, Indraneel Sanyal², Yu-Chih Chen², Ying-Hao Ju², Akira Nakajima³, Shinichi Nishizawa⁴, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Jen-Inn Chyi², Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NCU, 3.AIST, 4.Kyusyu Univ.)

Keywords:2DEG, AlGaN/GaN