[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-11] Formation of tunnel junction contact for GaN grown by pico-second laser PLD method

〇Kazuki Kodama¹, Nao Ogasawara², Kazuki Naito³, Osamu Oda¹, Masaru Hori¹, Daisuke Ueda¹ (1.Nagoya Univ., 2.Kyoto Inst. tech., 3.Taiyo Nippon Sanso)

Keywords:pico-second laser PLD, tunnel junction contacts, GaN

Vertical GaN power devices are expected as low-loss and high-voltage power conversion devices. However, it is important to reduce the contact resistance of the p-type GaN layer. The formation of a tunnel junction contact is effective to reduce the p-GaN contact resistance. In previous work, we have realized high-concentration n+-GaN regrowth, which enables to form non-alloy ohmic electrodes, by using picosecond laser PLD method. In this work, we investigated the selective regrowth of n + -GaN layer on p-GaN sample using PLD method and confirmed the formation of non-alloy ohmic electrode.