Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

Sat. Sep 21, 2019 9:00 AM - 12:30 PM E301 (E301)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-E301-1] Study on low damage etching of GaN using nitrogen plasma

〇Katsuyuki Miura¹ (1.Tokyo Inst.)

9:15 AM - 9:30 AM

[21a-E301-2] Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface

〇Mikito Nozaki¹, Daiki Terashima¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

9:30 AM - 9:45 AM

△ [21a-E301-3] Contactless Photoelectrochemical Etching of n-GaN in K₂S₂O₈/H₃PO₄ Mixed Solution

〇(D)Masachika Toguchi¹, Kazuki Miwa¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Takehiro Yoshida², Taketomo Sato¹ (1.RCIQE Hokkaido Univ., 2.SCIOCS Co. Ltd.)

9:45 AM - 10:00 AM

△ [21a-E301-4] Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching

〇Michihito Shimauchi^1,2, Kazuki Miwa¹, Masachika Toguchi¹, Taketomo Sato¹, Junichi Motohisa² (1.RCIQE,Hokkaido Unv., 2.IST, Hokkaido Univ.)

10:00 AM - 10:15 AM

△ [21a-E301-5] Gallium-nitride-based heterojunction bipolar transistors with two-dimensional hole gas fabricated by epitaxial lift-off process

〇Takeru Kumabe¹, Masaya Ogura¹, Atsushi Tanaka^2,3, Yuto Ando¹, Hirotaka Watanabe², Shigeyoshi Usami¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

10:15 AM - 10:30 AM

[21a-E301-6] n-type AlN MESMETs using graded AlGaN contact layers

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

10:30 AM - 10:45 AM

[21a-E301-7] Study on reducing on-resistance by introducing strain into silicon vertical power device

〇Takeya Inoue¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutui¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

[21a-E301-8] Study of low resistivity regions generated on the process of selective area growth of GaN Fin structures

〇Ken Takayama¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

11:15 AM - 11:30 AM

[21a-E301-9] Fabrication of GaN FinFETs using selective area growth method

〇Hayato Mukai¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

11:30 AM - 11:45 AM

[21a-E301-10] Ti/Al thickness dependence of ohmic contact resistances for AlGaN/AlN/GaN HEMT structures with thin AlGaN barrier layer

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akifumi Kasamatsu¹ (1.NICT)

11:45 AM - 12:00 PM

[21a-E301-11] Formation of tunnel junction contact for GaN grown by pico-second laser PLD method

〇Kazuki Kodama¹, Nao Ogasawara², Kazuki Naito³, Osamu Oda¹, Masaru Hori¹, Daisuke Ueda¹ (1.Nagoya Univ., 2.Kyoto Inst. tech., 3.Taiyo Nippon Sanso)

12:00 PM - 12:15 PM

[21a-E301-12] Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

〇Hiromasa Okita¹, Takuya Hoshii¹, Taihei Matsuhashi¹, Indraneel Sanyal², Yu-Chih Chen², Ying-Hao Ju², Akira Nakajima³, Shinichi Nishizawa⁴, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Jen-Inn Chyi², Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NCU, 3.AIST, 4.Kyusyu Univ.)

12:15 PM - 12:30 PM

[21a-E301-13] Effect of GaN/AlGaN growth using triethylgallium on 2DHG-side interfacial charge

〇Taihei Matsuhashi¹, Hoshii Takuya¹, Okita Hiromasa¹, Indraneel Sanyal², Yu-Chih Chen², Ying-Hao Ju², Nakajima Akira³, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Jen-Inn Chyi², Tsutsui Kazuo¹ (1.Tokyo Tech, 2.NCU, 3.AIST)

Session information

[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-1] Study on low damage etching of GaN using nitrogen plasma

[21a-E301-2] Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface

△ [21a-E301-3] Contactless Photoelectrochemical Etching of n-GaN in K₂S₂O₈/H₃PO₄ Mixed Solution

△ [21a-E301-4] Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching

△ [21a-E301-5] Gallium-nitride-based heterojunction bipolar transistors with two-dimensional hole gas fabricated by epitaxial lift-off process

[21a-E301-6] n-type AlN MESMETs using graded AlGaN contact layers

[21a-E301-7] Study on reducing on-resistance by introducing strain into silicon vertical power device

[21a-E301-8] Study of low resistivity regions generated on the process of selective area growth of GaN Fin structures

[21a-E301-9] Fabrication of GaN FinFETs using selective area growth method

[21a-E301-10] Ti/Al thickness dependence of ohmic contact resistances for AlGaN/AlN/GaN HEMT structures with thin AlGaN barrier layer

[21a-E301-11] Formation of tunnel junction contact for GaN grown by pico-second laser PLD method

[21a-E301-12] Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

[21a-E301-13] Effect of GaN/AlGaN growth using triethylgallium on 2DHG-side interfacial charge

Authentication

Session information

[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

△ [21a-E301-3] Contactless Photoelectrochemical Etching of n-GaN in K2S2O8/H3PO4 Mixed Solution

△ [21a-E301-4] Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching

△ [21a-E301-5] Gallium-nitride-based heterojunction bipolar transistors with two-dimensional hole gas fabricated by epitaxial lift-off process

Authentication

△ [21a-E301-3] Contactless Photoelectrochemical Etching of n-GaN in K₂S₂O₈/H₃PO₄ Mixed Solution