[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-13] Effect of GaN/AlGaN growth using triethylgallium on 2DHG-side interfacial charge

〇Taihei Matsuhashi¹, Hoshii Takuya¹, Okita Hiromasa¹, Indraneel Sanyal², Yu-Chih Chen², Ying-Hao Ju², Nakajima Akira³, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Jen-Inn Chyi², Tsutsui Kazuo¹ (1.Tokyo Tech, 2.NCU, 3.AIST)

Keywords:2DHG, GaN/AlGaN