[21a-E310-1~10] 15.4 III-V-group nitride crystals

△ [21a-E310-5] Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

〇Takeaki Hamachi¹, Masato Fujimoto¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Gallium Nitride, Threading dislocation, Leakage current