The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21a-PA2-1~31] 6.3 Oxide electronics

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PA2 (PA)

9:30 AM - 11:30 AM

[21a-PA2-15] A simulation model of VO2 layered devices and its application to coupled oscillation phenomena

Ryuta Tobe1, Kunio Okimura2, Md Suruz Mian2 (1.Grad. Sch. Eng., Tokai Univ., 2.Sch. Eng.,Tokai Univ.)

Keywords:VO2, Self-oscillation, Coupled oscillation

二酸化バナジウム(VO2)は所定の電圧を印加すると端子電圧が増加と減少を繰り返す自励発振特性を有する材料である. 今回我々はMHzオーダーの自励発振を示す積層型VO2デバイスの回路シミュレーションモデルを作製し, VO2協調発振回路の回路解析を行った.