[21a-PA2-1~31] 6.3 Oxide electronics

[21a-PA2-16] Neuromorphic Resistivity Modulation of Pt/Ti_0.99Sc_0.01O_2-d/Pt cross-point structure

Takeshi Fujita¹, Kinya Kawamura¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK)

Keywords:New oxide semiconductor, Neuromorphic memory

In this study, we have prepared the Pt/Ti_0.99Sc_0.01O_2-d/Pt cross point structure by RF magnetron sputtering and characterized its structural and electrical properties. By applying the pulse votage, this device exhibited the neuromorphic resistivity modulation. In this prepsentation, we will present about the mechanism of resistivity modulation.