[21a-PA2-1~31] 6.3 Oxide electronics

[21a-PA2-17] Electronic structure and metal-insulator transition of VO₂ thin films deposited on NiO/Al₂O₃

Takehiro Imagawa¹, Junpei Oikawa¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira^2,3, 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK, 3.Tohoku Univ.)

Keywords:VO2/NiO multilayer, metal-insulator (M-I)transtion

We have prepared the VO₂/NiO multilayer by RF magnetron sputtering and studied its crystal, electronic and electrical properties. Although the VO2 single film exhibit the metal-insulator (M-I)transtion, the VO₂/NiO multilayer becomes the insultator without M-I transition. This is considered to be due to both effects of lattice distortion and chrage transfer at interface.