[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-11] Local structure of Sn dopant β Ga oxide II

〇Kazushi Miki¹, T Yanagida², K Sasaki³, Y Tang¹, N Kawaguchi², S Yamakoshi⁴, A Kuramata³ (1.Univ. Hyogo, 2.NAIST, 3.Novel Crystal Tech., 4.Tamura Corp.)

Keywords:semiconductor, anneal, wide gap oxide

We report ambient dependence, during high temperature anneal, of n type beta Ga Oxide on electronic local state, investigated with photoemission measurement, under X-ray irrdiation.