The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

3:45 PM - 4:00 PM

[21p-B31-12] First-principles calculation of elastic and piezoelectric constants and spontaneous polarization of Pna21-(InxM1-x)O3(M=Al, Ga)

Jun Hasegawa1, Kazuhiro Shimada1 (1.Kanto Gakuin Univ.)

Keywords:sesqui-oxides, first-principles calculation

The orthorhombic sesqui-oxides with the space group Pna21, which is one of the metastable structures of the group III sesqui-oxides, are predicted to have large piezoelectric constants and spontaneous polarization than nitride semiconductors. The interface charge made by piezoelectric and spontaneous polarization between different materials plays an important role in high electron mobility transistors, so that the information on polarization is very important for the design of such electronic devices. In this study, we perform first principle calculations to investigate the mole fraction dependence of lattice parameters, elastic and piezoelectric constants, and spontaneous polarization based on density functional theory, considering the device design using the alloys of orthorhombic In2O3, Al2O3 and Ga2O3. The calculations are performed using 2x1x1 unit cells including 80 atoms to simulate random atomic configuration using special quasi-random structure approach. The computational results indicate non-linear behavior for the mole fraction dependence of the lattice parameters, elastic and piezoelectric constants, spontaneous polarization.