The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[21p-C309-1~9] 6.1 Ferroelectric thin films

Sat. Sep 21, 2019 1:45 PM - 4:00 PM C309 (C309)

Tomoaki Yamada(Nagoya Univ.), Takashi Nakajima(Tokyo Univ. of Sci.)

2:00 PM - 2:15 PM

[21p-C309-2] Piezoelectric properties of hard PZT (111) single crystal thin films

Akio Konishi1, Takekazu Shigenai1, Yukinori Tani1, Takeshi Kijima1 (1.KRYSTAL Inc.)

Keywords:ferroelectric

We use vapor deposited 50nm-ZrO2 as a buffer layer directly on the Si (111) substrate, further form a 150nm-Pt electrode thin film by RF sputtering method, and further thickness of system PZT (Zr / Ti = 30/70) When 1 um was grown, a high quality PZT (111) thin film. Furthermore, when pole evaluation of the obtained PZT thin film was performed, from the pole figure, six-fold symmetry was shown, and strong orientation was also shown in a plane different from a normal natural alignment film.