[21p-E301-1~7] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [21p-E301-1] Vertical Enhancement-Mode β-Ga₂O₃ MOSFETs with a Current Aperture

Man Hoi Wong¹、Hisashi Murakami²、Yoshinao Kumagai²、〇Masataka Higashiwaki¹ (1.NICT、2.Tokyo Univ. of Agri. & Tech.)

キーワード：gallium oxide, vertical transistor, enhancement-mode

This paper presents vertical enhancement-mode Ga₂O₃ MOSFETs with a current aperture fabricated by using Si- and N-ion implantation doping. The typical device demonstrated normally-off operation with a positive threshold voltage of +3.2 V, a large drain current on/off ratio exceeding 7×10⁶, and an off-state breakdown voltage of 260 V.