[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

[21p-E301-2] Resistance of β-Ga₂O₃ Schottky Barrier Diodes to Electron-Beam Irradiation

〇Chiahung Lin¹, Akinori Takeyama², Yohei Yuda³, Tatsuro Watahiki³, Hisashi Murakami⁴, Yoshinao Kumagai⁴, Takeshi Ohshima², Masataka Higashiwaki¹ (1.NICT, 2.QST, 3.Mitsubishi Electric Corp., 4.Tokyo Univ. of Agri. & Tech.)

Keywords:Ga2O3, Schottky barrier diode

Ultrawide bandgap semiconductors are expected to have high radiation tolerance owing to their strong
bond strengths and are thus promising for the fabrication of robust electronic devices to be deployed in space missions and nuclear power plants where multiple types of radiation are present. In this work, we investigated the performance of β-Ga₂O₃ vertical Schottky barrier diodes (SBDs) before and after
electron-beam irradiation up to a cumulative fluence of 1×10¹⁶ cm^-2.