[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

[21p-E301-5] Fabrication of GaN and Diamond Direct Bonding for High Output Power Device Applications

〇Jianbo Liang¹, Yasuo Shimizu², Yutaka Ohno², Kenji Shirasaki², Yasuyoshi Nagai², Makoto Kasu³, Seongwoo Kim⁴, Martin Kuball⁵, Naoteru Shigekawa¹ (1.Osaka City Univ., 2.IMR Tohoku Univ., 3.Saga Univ., 4.Adamant Namiki Precision Jewel Col, Ltd., 5.Univ. of Bristol)

Keywords:GaN, Diamond