[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

[21p-E301-7] High heat dissipation property of GaN-on-GaN HEMT bonded using atomic diffusion bonding

〇Naoya Okamoto^1,2, Yuichi Minoura^1,2, Miyuki Uomoto³, Takehito Shimatsu³ (1.Fujitsu, 2.Fujitsu Laboratories, 3.Tohoku Univ.)

Keywords:GaN substrate, diamond, atomic diffusion bonding

GaN-HEMTs on low-dislocation free-standing GaN substrates (GaN-on-GaN HEMTs) are expected to improve device performance by suppressing gate leakage current and current collapse caused by crystal defects. On the other hand, since the thermal conductivity of the GaN substrate is lower than that of the SiC substrate, there is a concern that heat generation deteriorates device characteristics. In this study, single-crystal diamond and GaN substrates were bonded by atomic diffusion bonding, and the high heat dissipation characteristics of GaN-on-GaN HEMTs were investigated.