Naoya Okamoto

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 1:45 PM - 3:30 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

3:15 PM - 3:30 PM

[21p-E301-7] High heat dissipation property of GaN-on-GaN HEMT bonded using atomic diffusion bonding

〇Naoya Okamoto^1,2, Yuichi Minoura^1,2, Miyuki Uomoto³, Takehito Shimatsu³ (1.Fujitsu, 2.Fujitsu Laboratories, 3.Tohoku Univ.)