[21p-N302-1~10] 6.3 Oxide electronics

[21p-N302-6] Atomic Layer Depostion of a Magnesium Phosphate Solid Electrolyte Film

〇Tohru Tsuruoka¹, Jin Su¹, Takuji Tsujita², Yu Nishitani², Tomofumi Hamamura², Yuu Inatomi², Kensuke Nakura², Kazuya Terabe¹ (1.NIMS, 2.Panasonic Ltd.)

Keywords:magnesium electrolyte film, atomic layer deposition

Atomic layer deposition(ALD) was used to fabricate magnesium phosphate thin films as a magnesium-ion conducting solid electrolyte. The deposition was carried out at lower deposition temperatures, ranging from 125 to 300 °C. The film exhibited an amorphous nature and excellent step coverage, even in narrow trenches with a higher aspect ratio. The films deposited at lower temperatures showed a lower activation energy of electrical conductivity. This can be explained by increased disordering of the phosphate matrix, giving rise to enhanced hopping conduction of magnesium ions. Our results indicate that ALD has great potential for the fabrication of magnesium-based solid electrolyte films.