12:00 PM - 12:15 PM [9a-W323-12] Oriented growth of VO2 films on Si (100) through recrystallization of initially grownVOx (x>2) phases - Recrystallization by biased reactive sputtering - 〇Kohei Matsuoka1, Kunio Okimura1 (1.Tokai Univ.)