Yongxun Liu

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 9:00 AM - 12:00 PM M114 (H114)

Oral presentation
| 13 Semiconductors
| 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-M114-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:30 AM - 10:45 AM

[9a-M114-7] RTA-temperature dependence of the electrical characteristics of the PVD-TiN metal gate SOI-MOSFETs fabricated by using minimal-fab gate-first process

〇Yongxun Liu¹, Kazushige Sato², Hiroyuki Tanaka^1,2, Kazuhiro Koga², Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

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