[9a-M114-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-M114-7] RTA-temperature dependence of the electrical characteristics of the PVD-TiN metal gate SOI-MOSFETs fabricated by using minimal-fab gate-first process

〇Yongxun Liu¹, Kazushige Sato², Hiroyuki Tanaka^1,2, Kazuhiro Koga², Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

Keywords:Minimal-fab, Gate-first process