Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-M114-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sat. Mar 9, 2019 9:00 AM - 12:00 PM M114 (H114)

Hitoshi Habuka(Yokohama National University), Masato Sone(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[9a-M114-1] Analysis of side etch mechanism during deep trench etching

〇Hiroyuki Tanaka^1,2, Hisato Ogiso^1,2, Shizuka Nakano^1,2, Yoshiyuki Nozawa^2,3, Toshihiro Hayami^2,3, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.SPPT)

9:15 AM - 9:30 AM

[9a-M114-2] On Dislocation Control at the Time of Rapid Temperature Elevation in Minimal Laser Heating Furnace

〇kazushige sato^1,3, Takashi Chiba^1,3, Masao Terada^1,3, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST, 3.Sakaguchi E.H VOC Corp.)

9:30 AM - 9:45 AM

[9a-M114-3] Film Characteristics deposited by Minimal Fab TiN Reactive Sputtering Tool (2)

〇Shuichi Noda¹, Kazuhiro Koga², Kazumasa Nemoto¹, Yuuki Yabuta³, Naoko Yamamoto³, Ryuichiro Kamei³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.Seinan-kogyo)

9:45 AM - 10:00 AM

[9a-M114-4] Study for Quality Improvement of Minimal Plasma TEOS Film by Using Quality Engineering

〇Noriko Miura¹, Kazuhiro Koga¹, Hiroyuki Tanaka^1,2, Yoshiyuki Nozawa³, Toshihiro Hayami³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST, 3.SPPT)

10:00 AM - 10:15 AM

[9a-M114-5] Variation of Contact Resistance Fabricated by Minimal Fab

〇Masashi Kase¹, Kazushige Sato^2,3, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.SAKAGUCHI VOC CORP.)

10:15 AM - 10:30 AM

[9a-M114-6] Fabrication of Electrically Stabilized Via Contact-Resistance for Half-Inch Sized Package

〇Fumito Imura^1,2, Michihiro Inoue¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.Minimal Fab)

10:30 AM - 10:45 AM

[9a-M114-7] RTA-temperature dependence of the electrical characteristics of the PVD-TiN metal gate SOI-MOSFETs fabricated by using minimal-fab gate-first process

〇Yongxun Liu¹, Kazushige Sato², Hiroyuki Tanaka^1,2, Kazuhiro Koga², Sommawan Khumpuang^1,2, Masayoshi Nagao¹, Takashi Matsukawa¹, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

10:45 AM - 11:00 AM

[9a-M114-8] Variation of Electrical Characteristics of TiN-Gate SOI CMOS Fabricated by Minimal Fab

〇Kazuhiro Koga¹, Liu Y.X², Fumito Imura^2,1, Masashi Kase², Shuichi Noda², Kazumasa Nemoto², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

11:00 AM - 11:15 AM

[9a-M114-9] Application of diamond wafer to Minimal Fab

〇Kazumasa Nemoto¹, Hiroyuki Tanaka¹, Shuichi Noda¹, Noriko Miura², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.Minimal Fab)

11:15 AM - 11:30 AM

[9a-M114-10] Real-time precursor transport observation in Si minimal CVD reactor by QCM

Toshinori Takahashi¹, Mitsuko Muroi¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

11:30 AM - 11:45 AM

[9a-M114-11] Considerations of ultrapure water quantity optimization for wafer cleaning

〇Tomoaki Kageyama^1,3, Kazumasa Nemoto², Sommawan Khumpuang^2,3, Shiro Hara^2,3, Sang-Seok Lee¹ (1.Tottori Univ., 2.MINIMAL, 3.AIST)

11:45 AM - 12:00 PM

[9a-M114-12] Cleanroom-Free Environment-Control System PLAD for Minimal fab (Ⅲ)

〇Takashi Yajima^1,2, Noriko Miura¹, Masaharu Yasui^1,2, Sommawan Khumpuang^1,2, Hitoshi Maekawa^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

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