9:30 AM - 11:30 AM [10a-PB2-12] Dependence of active layer thickness on 1.5 μm PL properties in Si/B-doped β-FeSi2/Si stacked structures 〇(M2)Naohiro Oka1, Ryuji Satou1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)